Onivefu: Unveiling the future of materials science with semiconductors


Asishana Onivefu is a fourth-year Ph.D. candidate in analytical chemistry at the University of Delaware.

In an era when technological advancement is the driving force behind global progress, envision a future when the United States of America emerges as the vanguard of innovation, spearheaded by the transformative power of advanced semiconductor technology. These minuscule yet potent devices serve as the linchpin of our digital landscape, steering breakthroughs in artificial intelligence, 5G network communication and cutting-edge electronic designs. Embracing and investing in the frontier of advanced property semiconductors is not merely a choice but a pivotal strategy to propel the United States of America into a new era of economic growth, global competitiveness and technological leadership.

In the realm of materials science and semiconductor research, a groundbreaking endeavor is underway, focusing on the gas phase modification and passivation of semiconductor material surfaces under medium-vacuum conditions. My innovative research seeks to revolutionize the landscape of electronic systems, catalysis, sensing and various other technological domains.

The study, which centers on three primary objectives, is poised to unlock a myriad of possibilities in materials science. First and foremost, the meticulous control of the concentration and surface coverage of organic ligands on metal oxide nanomaterials and thin films is a crucial aspect. Employing sophisticated analytical instruments such as Fourier-transform infrared spectroscopy, X-ray photoelectron spectroscopy, time-of-flight secondary ion mass spectrometry, solid-state nuclear magnetic resonance spectroscopy and other analytical instruments, I am conducting a comprehensive exploration that aims to pave the way for new and advanced materials with precisely controlled properties.

The second objective delves into experimental and computational investigations on the mechanism of organic ligand displacement on metal oxide nanomaterials and thin films. Understanding the intricate processes of ligand displacement on semiconductor surfaces is paramount, as it holds the key to unlocking novel features in semiconductor research. The controlled deposition and displacement of ligands plays a pivotal role in achieving enhanced stability, reliability and improved electrical properties in semiconductors.

A significant facet of my research revolves around the passivation of surface defects in semiconductor chip flat surfaces. By addressing and mitigating surface defects, the study aims to contribute to the reduction of surface recombination, improvement of carrier lifetime, enhanced oxidation resistance, better charge transport and an overall enhancement of electrical properties in semiconductors.

In practical terms, this research has far-reaching implications. The controlled deposition of ligands on semiconductor surfaces opens doors to the development of integrated circuits that can power more efficient and powerful electronic systems. Further, it plays a crucial role in catalysis, sensing and energy storage. The outcomes of my research could lead to the development of light-emitting devices with enhanced efficiency and durability, as well as advanced materials that find applications in the biomedical field for the creation of sensors and diagnostic devices.

The research is marked by an ambitious goal. Aspiring to make groundbreaking contributions in the realms of materials science and semiconductor research, the primary objective is to advance the comprehension of gas phase modification on metal oxide nanomaterial surfaces and the passivation of thin film semiconductor materials under medium-vacuum conditions. The ultimate aim is to lay the groundwork for the evolution of more efficient and potent electronic systems, catalysis, sensors and other cutting-edge technologies that have the potential to positively influence industries, including biomedical and environmental monitoring.

Seated at the forefront of a technological revolution, I am poised to redefine the landscape of materials science and semiconductor research. The potential outcomes of this study could herald a new era of advancements in electronic systems, catalysis, sensing and various other fields, ultimately contributing to the enhancement of our technological future.

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